Analysis of High-Purity Copper Using ETV-ICP-OES

Application Brief

Analysis of High-Purity Copper Using ETV-ICP-OES With Axial Plasma Observation

Ensuring the integrity of high-purity copper is critical for applications in electrical engineering and advanced manufacturing. Even trace impurities can significantly impact conductivity and mechanical properties. This application report presents a refined approach to elemental analysis using Electrothermal Vaporization (ETV) coupled with Inductively Coupled Plasma Optical Emission Spectrometry (ICP-OES), enabling accurate detection of trace elements in copper without matrix interference.

By integrating ETV as a sample introduction method, the technique eliminates dilution steps and enhances sensitivity, achieving detection limits in the µg/kg range. The SPECTRO ARCOS ICP-OES system with axial plasma observation demonstrates consistent performance, offering precision below 3% RSD and reliable calibration using certified reference materials. Compared to conventional solution-based ICP-OES, this method improves detection limits by an order of magnitude, making it suitable for compliance with EN 1976:1998 and ASTM B115-00 standards.

Key benefits for your lab:
- Achieve ultra-low detection limits for trace elements in metals
- Minimize sample preparation errors and contamination risks
- Automate workflows with high reproducibility and speed

Download the full application report to explore how ETV-ICP-OES with SPECTRO ARCOS enhances your trace metal analysis capabilities.